5SHY3545L0016 IGCT可控硅主板

5SHY3545L0016 相对于IGBT，IGCT具有非常高的浪涌电流承受速度，4英寸器件可耐受10ms的30kA以上的正弦暂态电流。从开关速度来看，IGCT的开通和关断均要慢于IGBT事实上，对于IGCT 5SHY40L4511和压接式IGBT 5SNA1300K450300，若考虑2800V/1300A的关断电压和电流，IGCT的关断电压约为5J，而IGBT约为6J，因此另外，IGCT在导通2kA电流时的通态电压降最低达到1.5V，而IGBT则为3.0V，因此IGCT通态损耗也略低。。但是，由于IGBT是电压源型器件，门极驱动功率远低于恒定IGCT。

5SHY3545L0016 Compared to IGBTs, IGCTs have very high inrush current withstand speeds, with 4-inch devices withstanding sinusoidal transient currents of 30kA or more for 10ms. In terms of switching speed, IGCT turn-on and turn-off are both slower than IGBTs In fact, for the IGCT 5SHY40L4511 and the crimped IGBT 5SNA1300K450300, if we consider the turn-off voltage and current of 2800V/1300A, the turn-off voltage of the IGCT is about 5J, while that of the IGBT is about 6J, so additionally the on-state voltage drop of the IGCT at a conductive The on-state voltage drop at a current of 2kA is as low as 1.5V compared to 3.0V for the IGBT, so the IGCT on-state loss is also slightly lower. However, since the IGBT is a voltage source type device, the gate drive power is much lower than the constant IGCT.

5SHY3545L0016 从成本上看，目前同等容量的IGCT售价约为压接式IGBT的1/2，而模块式IGBT价格相对较低。事实上，由于当前IGCT的应用不如IGBT广泛，使得市场价格偏高，如果实现更大规模的应用，IGCT成本还可以降低。

5SHY3545L0016 In terms of cost, the current selling price of an IGCT of the same capacity is about 1/2 that of a crimped IGBT, while the price of a modular IGBT is relatively low. In fact, due to the current IGCT is not as widely used as IGBT, making the market price is high, if the realisation of a larger scale of application, IGCT cost can also be reduced.

5SHY3545L0016 驱动功率等性能表现要逊于IGBT，但在容量、通态损耗、开关损耗、成本等表现性能方面具有潜在优势。

5SHY3545L0016 Overall, the performance of IGCT is inferior to that of IGBT in terms of switching frequency and drive power, but it has potential advantages in terms of capacity, pass-state loss, switching loss, cost and other performance properties.