5SHY3545L0020 IGCT 可控硅主板

5SHY3545L0020 对于自然换流型DCB，换流速度取决于机械开关触头间弧压与电力电子支路通态压降的差值。由于IGCT的导通压降终端，以9kA、125℃为例，相近电压电流等级的单体IGCT和IGBT的导通压降分别为3.2V和6V [ 25 ]，从而IGCT-DCB的换流速度更快。另外，对于相同电弧电压，在满足换流的情况下，相同电压等级的IGCT可串联数量较大的IGBT，自然换流混合式IGCT-DCB适用的电压等级较高。

5SHY3545L0020 For the natural commutation type DCB, the commutation speed depends on the difference between the arc voltage between the mechanical switch contacts and the on-state voltage drop of the power electronic branch. Due to the on-state voltage drop termination of the IGCT, for example, the on-state voltage drops of a single IGCT and IGBT of similar voltage and current ratings are 3.2 V and 6 V [ 25 ], respectively, and thus the commutation speed of the IGCT-DCB is faster. In addition, for the same arc voltage, a larger number of IGBTs can be connected in series with IGCTs of the same voltage rating to satisfy the commutation, so that the natural commutation hybrid IGCT-DCB is applicable to a higher voltage rating.

5SHY3545L0020 当电流转移至电子支路后，若在机械开关触头间隙达到绝缘强度之前，短路电流已上升至接近最大关断电流极限，为保证器件不损坏，IGBT必须迅速关断并建立电压，造成机械开关过压击穿而导致DCB关断失败。而IGCT则选择维持导通，当线路电流下降至可关断范围后再进行关断。因此IGCT-DCB处于过流工况下的关断具有较大的优势。

5SHY3545L0020 When the current is transferred to the electronic branch, if the short-circuit current has risen close to the maximum shutdown current limit before the mechanical switch contact gap reaches insulation strength, to ensure that the device is not damaged, the IGBT must quickly shut down and build up the voltage, resulting in overvoltage breakdown of the mechanical switch and resulting in a DCB shutdown failure. The IGCT, on the other hand, chooses to maintain conduction and turn off when the line current drops to the turn-off range. Therefore, IGCT-DCB shutdown under overcurrent conditions has a greater advantage

5SHY3545L0020 IGCT为流控型器件，其开通和关断过程都需要驱动电路向门极注入或抽出大电流，驱动功率增大，很难因电磁干扰造成误触发。而IGBT为压控型器件，在DCB动作过程中的电压、电流的变化会引起门极电压的波动，造成IGBT误触发。作者在实验室开展大量的大电流关断实验，曾多次出现IGBT误触发现象，但IGCT有更强的的抗干扰性能，类似的情况几乎从未发生过。

5SHY3545L0020 IGCT is a current-controlled device, and its turn-on and turn-off processes require the driver circuit to inject or pump large currents into the gate, increasing the drive power, and it is difficult to cause false triggering due to electromagnetic interference. The IGBT is a voltage-controlled device, and the changes in voltage and current during the DCB operation will cause fluctuations in the gate voltage, resulting in IGBT false triggering. The authors in the laboratory to carry out a large number of high-current shutdown experiments, there have been many times the phenomenon of false triggering of IGBT, but the IGCT has a stronger anti-interference performance, a similar situation almost never happened.