5SHX2645L0004 库存备货

5SHX2645L0004 总的来说，IGCT的开关频率IGCT是通过在门极可关断晶闸管（门极可关断晶闸管，GTO）中引入缓冲层、阳极透明发射极结构，并将门极驱动电路集成，从而使IGCT不仅具有大电流、高火灾电压、低通态压降，同时还具有较高的开关速度、高可靠性等优点。IGCT目前产品的最大可关断电流达到8kA。

5SHX2645L0004 IGCT is made by introducing buffer layer, anode transparent emitter structure in gate turn-off thyristor (gate turn-off thyristor, GTO) and integrating the gate drive circuit, so that IGCT not only has the advantages of high current, high fire voltage, low on-state voltage drop, but also has the advantages of high switching speed, high reliability, etc. The maximum turn-off current of current products of IGCT reaches 8kA.

5SHX2645L0004 从成本上看，目前同等容量的IGCT售价约为压接式IGBT的1/2，而模块式IGBT价格相对较低。事实上，由于当前IGCT的应用不如IGBT广泛，使得市场价格偏高，如果实现更大规模的应用，IGCT成本还可以降低。

5SHX2645L0004  In terms of cost, the current selling price of an IGCT of the same capacity is about 1/2 that of a crimped IGBT, while the price of a modular IGBT is relatively low. In fact, due to the current IGCT is not as widely used as IGBT, making the market price is high, if the realisation of a larger scale of application, IGCT cost can also be reduced.

5SHX2645L0004  动功率等性能表现要逊于IGBT，但在容量、通态损耗、开关损耗、成本等表现性能方面具有潜在优势。

5SHX2645L0004  Overall, the performance of IGCT is inferior to that of IGBT in terms of switching frequency and drive power, but it has potential advantages in terms of capacity, pass-state loss, switching loss, cost and other performance properties.