5SHX0360D0001ABB可控硅晶闸管模块

5SHY4045L0003可控硅晶闸管在材料上，以硅单晶为基本材料P1N1P2N2四层三端器件.半导体器件。因为它的特性类似干直空闸流管，所以国际上通称为硅晶体闸流管,简称晶闸管,又因为晶闸管一开始的在静止整流方面，所以又被称之为硅可控整流元件，简称为可控硅SCR。

5SHY4045L0003 In terms of material, silicon single crystal is used as the basic material P1N1P2N2 four-layer three-terminal device . Semiconductor devices. Because of its characteristics similar to the dry straight empty gate current tube, so the international commonly known as silicon crystal gate current tube, referred to as thyristor, and because the thyristor at the beginning of the static rectifier, so it is also known as silicon controllable rectifier components, referred to as silicon controlled SCR.

5SHY4045L0003在材料上，以硅单晶为基本材料P1N1P2N2四层三端器件.半导体器件。因为它的特性类似干直空闸流管，所以国际上通称为硅晶体闸流管,简称晶闸管,又因为晶闸管一开始的在静止整流方面，所以又被称之为硅可控整流元件，简称为可控硅SCR。

5SHY4045L0003 In terms of material, silicon single crystal is used as the basic material P1N1P2N2 four-layer three-terminal device . Semiconductor devices. Because of its characteristics similar to the dry straight empty gate current tube, so the international commonly known as silicon crystal gate current tube, referred to as thyristor, and because the thyristor at the beginning of the static rectifier, so it is also known as silicon controllable rectifier components, referred to as silicon controlled SCR.

5SHY4045L0003在性能上，可控硅不仅具有单向导电性，而且还具有比硅整流元件，更为可贵的可控性，它只有导通和关断两种状态。可控硅能以毫安级电流控制大功率的机电设备，如果大于此功率，因元件开关损耗显著增加，允许通过的平均电流相降低，此时，标称电流应降级使用。

5SHY4045L0003 In terms of performance, the SCR not only has a unidirectional conductivity, but also has more than silicon rectifier components, more valuable controllability, it is only on and off two states. Thyristor can control high-power electromechanical equipment with milliamperes of current, if greater than this power, due to significant increase in component switching losses, allowing the average current through the phase is reduced, at this time, the nominal current should be downgraded to use.