5SHX1060H0003 IGCT可控硅主板 

5SHX1060H0003 抗干扰性,IGCT为流控型器件，其开通和关断过程都需要驱动电路向门极注入或抽出大电流，驱动功率增大，很难因电磁干扰造成误触发。而IGBT为压控型器件，在DCB动作过程中的电压、电流的变化会引起门极电压的波动，造成IGBT误触发。作者在实验室开展大量的大电流关断实验，曾多次出现IGBT误触发现象，但IGCT有更强的的抗干扰性能，类似的情况几乎从未发生过。

5SHX1060H0003 Anti-interference, IGCT is a current-controlled device, and its turn-on and turn-off processes require the driver circuit to inject or pump large currents into the gate, the drive power increases, and it is difficult to cause false triggering due to electromagnetic interference. The IGBT is a voltage-controlled device, and the changes in voltage and current during the DCB operation will cause fluctuations in the gate voltage, resulting in false triggering of the IGBT. The authors in the laboratory to carry out a large number of high-current shutdown experiments, there have been many times the phenomenon of IGBT false triggering, but the IGCT has a stronger anti-interference performance, a similar situation almost never happened.

5SHX1060H0003 成本性，IGCT-DCB与IGBT-DCB的主电路没有区别，由于只是单次动作，两个开关管的驱动功率基本相同，故驱动电源方面成本也基本相同。由于IGCT本身的制造成本和销售价格均低于IGBT ,IGCT-DCB在成本方面增加了优势。

5SHX1060H0003 Cost, IGCT-DCB and IGBT-DCB main circuit is not different, due to just a single action, the two switching tube drive power is basically the same, so the cost of the drive power supply is basically the same. As the manufacturing cost and sales price of IGCT itself are lower than IGBT ,IGCT-DCB increases the advantage in cost.

5SHX1060H0003 可靠性，同IGCT-MMC，IGCT本身的可靠性且要明显于IGBT。且IGCT的通流温升低于IGBT，抗干扰性能强于IGBT，能耐受大浪涌电流，因此IGCT-DCB更高的可靠性。综上所述，IGCT-DCB在通流能力、换流能力、过流工况、干扰抗性、成本以及可靠性等方面产生优势，正是这些优势使得IGCT在DCB中的应用具有扩大的前景，值得科研工作者深入研究。

5SHX1060H0003 Reliability, the same as IGCT-MMC, IGCT itself is significantly more reliable than IGBT, and IGCT through-current temperature rise is lower than that of IGBT, interference resistance is stronger than that of IGBT, and can withstand large inrush currents, so IGCT-DCB higher reliability. In summary, IGCT-DCB in the through-current capacity, current exchange capacity, overcurrent conditions, interference resistance, cost and reliability, etc. to produce advantages, it is these advantages make the application of IGCT in DCB has expanded prospects, worth researchers in-depth study.

5SHX1060H0003 IGCT是通过在门极可关断晶闸管（门极可关断晶闸管，GTO）中引入缓冲层、阳极透明发射极结构，并将门极驱动电路集成，从而使IGCT不仅具有大电流、高火灾电压、低通态压降，同时还具有较高的开关速度、高可靠性等优点。IGCT目前产品的最大可关断电流达到8kA。

5SHX1060H0003 IGCT is made by introducing buffer layer, anode transparent emitter structure in gate turn-off thyristor (gate turn-off thyristor, GTO) and integrating the gate drive circuit, so that IGCT not only has the advantages of high current, high fire voltage, low on-state voltage drop, but also has the advantages of high switching speed, high reliability, etc. The maximum turn-off current of current products of IGCT reaches 8kA.