5SHX1445H0001 IGCT可控硅主板

5SHX1445H0001 IGCT是通过在门极可关断晶闸管（门极可关断晶闸管，GTO）中引入缓冲层、阳极透明发射极结构，并将门极驱动电路集成，从而使IGCT不仅具有大电流、高火灾电压、低通态压降，同时还具有较高的开关速度、高可靠性等优点。IGCT目前产品的最大可关断电流达到8kA。

5SHX1445H0001 IGCT is made by introducing buffer layer, anode transparent emitter structure in gate turn-off thyristor (gate turn-off thyristor, GTO) and integrating the gate drive circuit, so that IGCT not only has the advantages of high current, high fire voltage, low on-state voltage drop, but also has the advantages of high switching speed, high reliability, etc. The maximum turn-off current of current products of IGCT reaches 8kA.

5SHX1445H0001 相对于IGBT，IGCT具有非常高的浪涌电流承受速度，4英寸器件可耐受10ms的30kA以上的正弦暂态电流。从开关速度来看，IGCT的开通和关断均要慢于IGBT事实上，对于IGCT 5SHY40L4511和压接式IGBT 5SNA1300K450300，若考虑2800V/1300A的关断电压和电流，IGCT的关断电压约为5J，而IGBT约为6J，因此另外，IGCT在导通2kA电流时的通态电压降最低达到1.5V，而IGBT则为3.0V，因此IGCT通态损耗也略低。。但是，由于IGBT是电压源型器件，门极驱动功率远低于恒定IGCT。

5SHX1445H0001 Compared to IGBTs, IGCTs have very high inrush current withstand speeds, with 4-inch devices withstanding sinusoidal transient currents of 30kA or more for 10ms. In terms of switching speed, IGCT turn-on and turn-off are both slower than IGBTs In fact, for the IGCT 5SHY40L4511 and the crimped IGBT 5SNA1300K450300, if we consider the turn-off voltage and current of 2800V/1300A, the turn-off voltage of the IGCT is about 5J, while that of the IGBT is about 6J, so additionally the on-state voltage drop of the IGCT at a conductive The on-state voltage drop at a current of 2kA is as low as 1.5V compared to 3.0V for the IGBT, so the IGCT on-state loss is also slightly lower. However, since the IGBT is a voltage source type device, the gate drive power is much lower than the constant IGCT.

5SHX1445H0001 从成本上看，目前同等容量的IGCT售价约为压接式IGBT的1/2，而模块式IGBT价格相对较低。事实上，由于当前IGCT的应用不如IGBT广泛，使得市场价格偏高，如果实现更大规模的应用，IGCT成本还可以降低。

5SHX1445H0001 In terms of cost, the current selling price of an IGCT of the same capacity is about 1/2 that of a crimped IGBT, while the price of a modular IGBT is relatively low. In fact, due to the current IGCT is not as widely used as IGBT, making the market price is high, if the realisation of a larger scale of application, IGCT cost can also be reduced.

5SHX1445H0001 总的来说，IGCT的开关频率、驱动功率等性能表现要逊于IGBT，但在容量、通态损耗、开关损耗、成本等表现性能方面具有潜在优势。

5SHX1445H0001 Overall, the performance of IGCT is inferior to that of IGBT in terms of switching frequency and drive power, but it has potential advantages in terms of capacity, pass-state loss, switching loss, cost and other performance properties.