5SHX1960L0001 可控硅主板

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​ABB 5SHX1960L0001 在柔性HVDC输电中,VSC的实现主要有两电平、三电平、多层(模块化多电平转换器,MMC)方案等。两电平或三电平VSC通常采用SPWM调制,通过PWM波来相当于正弦波。而为了降低谐波,开关频率较高,通常达到数kHz。而MMC采用多电平联动方案,无论是采用载波移相PWM调制还是采用最近电平逼近调制、输出电压的对应开关频率都相对,所以开关管可以采用较低的开关频率来达到更好的谐波特性。这样,也给IGCT的应用带来了空间。...


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5SHX1960L0001 可控硅主板

5SHX1960L0001 在柔性HVDC输电中,VSC的实现主要有两电平、三电平、多层(模块化多电平转换器,MMC)方案等。两电平或三电平VSC通常采用SPWM调制,通过PWM波来相当于正弦波。而为了降低谐波,开关频率较高,通常达到数kHz。而MMC采用多电平联动方案,无论是采用载波移相PWM调制还是采用最近电平逼近调制、输出电压的对应开关频率都相对,所以开关管可以采用较低的开关频率来达到更好的谐波特性。这样,也给IGCT的应用带来了空间。

5SHX1960L0001 In flexible HVDC transmission, VSCs are implemented in two-level, three-level, and multilayer (modular multilevel converter, MMC) schemes. The two-level or three-level VSCs usually use SPWM modulation, which is equivalent to sinusoidal waveforms through PWM waveforms. And in order to reduce the harmonics, the switching frequency is high, usually up to several kHz. while MMC adopts the multilevel linkage scheme, whether it adopts the carrier phase-shift PWM modulation or adopts the nearest level-approximation modulation, the corresponding switching frequency of the output voltage is relative, so that switching tubes can be used with a lower switching frequency to achieve better harmonic characteristics. This also gives room for IGCT applications.

3BHL000390P0104 5SHX1960L0004..png



5SHX1960L0001 IGCT是通过在门极可关断晶闸管(门极可关断晶闸管,GTO)中引入缓冲层、阳极透明发射极结构,并将门极驱动电路集成,从而使IGCT不仅具有大电流、高火灾电压、低通态压降,同时还具有较高的开关速度、高可靠性等优点。IGCT目前产品的最大可关断电流达到8kA。

5SHX1960L0001 IGCT is made by introducing buffer layer, anode transparent emitter structure in gate turn-off thyristor (gate turn-off thyristor, GTO) and integrating the gate drive circuit, so that IGCT not only has the advantages of high current, high fire voltage, low on-state voltage drop, but also has the advantages of high switching speed, high reliability, etc. The maximum turn-off current of current products of IGCT reaches 8kA.

3BHL000390P0104 5SHX1960L0004...png

5SHX1960L0001 总的来说,IGCT的开关频率、驱动功率等性能表现要逊于IGBT,但在容量、通态损耗、开关损耗、成本等表现性能方面具有潜在优势。

5SHX1960L0001 Overall, the performance of IGCT is inferior to that of IGBT in terms of switching frequency and drive power, but it has potential advantages in terms of capacity, pass-state loss, switching loss, cost and other performance properties.


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