5SHY3545L0002 IGCT可控硅主板

5SHY3545L0002 对于自然换流型DCB，换流速度取决于机械开关触头间弧压与电力电子支路通态压降的差值。由于IGCT的导通压降终端，以9kA、125℃为例，相近电压电流等级的单体IGCT和IGBT的导通压降分别为3.2V和6V [ 25 ]，从而IGCT-DCB的换流速度更快。另外，对于相同电弧电压，在满足换流的情况下，相同电压等级的IGCT可串联数量较大的IGBT，自然换流混合式IGCT-DCB适用的电压等级较高。

5SHY3545L0002 For the natural commutation type DCB, the commutation speed depends on the difference between the arc voltage between the mechanical switch contacts and the on-state voltage drop of the power electronic branch. Due to the on-state voltage drop termination of the IGCT, for example, the on-state voltage drops of a single IGCT and IGBT of similar voltage and current ratings are 3.2 V and 6 V [ 25 ], respectively, and thus the commutation speed of the IGCT-DCB is faster. In addition, for the same arc voltage, a larger number of IGBTs can be connected in series with IGCTs of the same voltage rating to satisfy the commutation, so that the natural commutation hybrid IGCT-DCB is applicable to a higher voltage rating.

5SHY3545L0002 在DCB关断过程中，电流从机械开关支路转移至电力电子支路，开关管导通线路短路电流约3~5ms后关断。关断时的温度过高可能导致关断失败，而强开关管的通流能力在通流期间的温度上升较小，关断大电流的可靠性较高。IGCT具有较强的电导调制效应，通态压降远低于IGBT，且不会出现IGBT的退闸现象，在通流期间的温度上升远低于IGBT，因此具有更高的通流能力。

5SHY3545L0002 During DCB shutdown, the current is transferred from the mechanical switching branch to the power electronic branch, and the switching tube conducts the line short-circuit current for about 3 to 5 ms before shutting down. The high temperature during turn-off may lead to turn-off failure, while the strong switching tube has a higher reliability of turning off high currents with a smaller temperature rise during turn-off.IGCT has a stronger conductance modulation effect, the on-state voltage drop is much lower than that of IGBT, and the phenomenon of IGBT debounce does not occur, and the temperature rise during turn-off is much lower than that of IGBT, so that it has a much higher turn-off capability.

5SHY3545L0002 IGCT为流控型器件，其开通和关断过程都需要驱动电路向门极注入或抽出大电流，驱动功率增大，很难因电磁干扰造成误触发。而IGBT为压控型器件，在DCB动作过程中的电压、电流的变化会引起门极电压的波动，造成IGBT误触发。作者在实验室开展大量的大电流关断实验，曾多次出现IGBT误触发现象，但IGCT有更强的的抗干扰性能，类似的情况几乎从未发生过。

5SHY3545L0002 IGCT is a current-controlled device, and its turn-on and turn-off processes require the driver circuit to inject or pump large currents into the gate, increasing the drive power, and it is difficult to cause false triggering due to electromagnetic interference. The IGBT is a voltage-controlled device, and the changes in voltage and current during the DCB operation will cause fluctuations in the gate voltage, resulting in IGBT false triggering. The authors in the laboratory to carry out a large number of high-current shutdown experiments, there have been many times the phenomenon of false triggering of IGBT, but the IGCT has a stronger anti-interference performance, a similar situation almost never happened.